DOINGTER DOB80N06

DOINGTER · FETs & Power MOSFETs · MPN DOB80N06

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Specifications

Gate Charge(Qg)75nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation83W
RDS(on)7.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)200pF
Number1 N-channel
Input Capacitance(Ciss)4.008nF
TypeN-Channel

Technical details

N-Channel 60V 80A 83W Surface Mount TO-263

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