DOINGTER DOB14N10

DOINGTER · FETs & Power MOSFETs · MPN DOB14N10

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation312W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.7nF
TypeN-Channel

Technical details

N-Channel 100V 140A 312W Surface Mount TO-263

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