DOINGTER DOB110N15

DOINGTER · FETs & Power MOSFETs · MPN DOB110N15

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Specifications

Gate Charge(Qg)84.2nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)545pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation192W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.928nF
TypeN-Channel

Technical details

150V 110A 4V 192W 7mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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