DOINGTER DO4P06SA

DOINGTER · FETs & Power MOSFETs · MPN DO4P06SA

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Specifications

Gate Charge(Qg)23.6nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
RDS(on)100mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)34pF
Number1 P-Channel
Input Capacitance(Ciss)1.449nF
TypeP-Channel

Technical details

P-Channel 60V 3.5A 2W Surface Mount SOT-23-3

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