DOINGTER DO4441

DOINGTER · FETs & Power MOSFETs · MPN DO4441

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)5A
Output Capacitance(Coss)49pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.4W
RDS(on)80mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)34pF
Number1 P-Channel
Input Capacitance(Ciss)1.4nF
TypeP-Channel

Technical details

60V 5A 2.5V 2.4W 80mΩ@10V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS

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