DOINGTER DO3N10SA

DOINGTER · FETs & Power MOSFETs · MPN DO3N10SA

No reviews yet — be the first to review DOINGTER DO3N10SA.

Specifications

Gate Charge(Qg)5.2nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)286mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)320pF
TypeN-Channel

Technical details

N-Channel 100V 3A 2.5W Surface Mount SOT-23-3

Related FETs & Power MOSFETs