DOINGTER DO3415S

DOINGTER · FETs & Power MOSFETs · MPN DO3415S

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Specifications

Gate Charge(Qg)8nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)40mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)288pF
TypeP-Channel

Technical details

P-Channel 20V 4.1A 1.1W Surface Mount SOT-23

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