DOINGTER DO3400E

DOINGTER · FETs & Power MOSFETs · MPN DO3400E

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC@10V
Output Capacitance(Coss)42pF
Current - Continuous Drain(Id)4.8A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))850mV
Pd - Power Dissipation1.24W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)27mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)521pF
TypeN-Channel

Technical details

30V 4.8A 850mV 1.24W 27mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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