DOINGTER DO2301BD

DOINGTER · FETs & Power MOSFETs · MPN DO2301BD

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)4nC@4.5V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)83pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)43mΩ@4.5V
Number2 P-Channel
Input Capacitance(Ciss)480pF
TypeP-Channel

Technical details

20V 3A 700mV 1W 43mΩ@4.5V 2 P-Channel P-Channel SOT-23-6D Single FETs, MOSFETs RoHS

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