DOINGTER · FETs & Power MOSFETs · MPN DO2003B
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 4nC@4.5V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 111pF |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 700mW |
| RDS(on) | 21mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 300pF |
| Type | N-Channel + P-Channel |
20V 4A 600mV 700mW 21mΩ@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOT-23-6D Single FETs, MOSFETs RoHS