DOINGTER DO2003B

DOINGTER · FETs & Power MOSFETs · MPN DO2003B

No reviews yet — be the first to review DOINGTER DO2003B.

Specifications

Drain to Source Voltage20V
Gate Charge(Qg)4nC@4.5V
Current - Continuous Drain(Id)4A
Output Capacitance(Coss)111pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation700mW
RDS(on)21mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)61pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)300pF
TypeN-Channel + P-Channel

Technical details

20V 4A 600mV 700mW 21mΩ@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOT-23-6D Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs