DOINGTER · FETs & Power MOSFETs · MPN DO05NG-I
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| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 5A |
| Output Capacitance(Coss) | 55pF |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V@250uA |
| Pd - Power Dissipation | 59.5W |
| RDS(on) | 2.3Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 690pF |
| Type | N-Channel |
650V 5A 3.5V@250uA 59.5W 2.3Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS