DOINGTER DO05NG-C

DOINGTER · FETs & Power MOSFETs · MPN DO05NG-C

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation24.5W
Reverse Transfer Capacitance (Crss@Vds)1.3pF
RDS(on)2.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)400pF
TypeN-Channel

Technical details

N-Channel 650V 5A 24.5W Surface Mount TO-252

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