DOINGTER DO02B02A

DOINGTER · FETs & Power MOSFETs · MPN DO02B02A

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)2.5nC@12V
Output Capacitance(Coss)36pF
Current - Continuous Drain(Id)2A
Gate Threshold Voltage (Vgs(th))760mV
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)42mΩ@4.5V
Number2 N-Channel + 2 P-Channel
Input Capacitance(Ciss)150pF
TypeN-Channel

Technical details

20V 2A 760mV 1.2W 42mΩ@4.5V 2 N-Channel + 2 P-Channel N-Channel SOT-23-6D Single FETs, MOSFETs RoHS

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