DOINGTER DHI013TG-L

DOINGTER · FETs & Power MOSFETs · MPN DHI013TG-L

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)25nC@10V
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)593pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation139W
Reverse Transfer Capacitance (Crss@Vds)4.2pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.67nF
TypeN-Channel

Technical details

120V 60A 2V 139W 10mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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