DOINGTER DH5R5T3G

DOINGTER · FETs & Power MOSFETs · MPN DH5R5T3G

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)750pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation417W
Reverse Transfer Capacitance (Crss@Vds)16.8pF
RDS(on)4.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF
TypeN-Channel

Technical details

100V 120A 1.7V 417W 4.2mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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