DOINGTER DH200PG

DOINGTER · FETs & Power MOSFETs · MPN DH200PG

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)200mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.5nF
TypeP-Channel

Technical details

P-Channel 100V 12A 54W Surface Mount TO-252

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