DOINGTER DH120NG

DOINGTER · FETs & Power MOSFETs · MPN DH120NG

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Specifications

Gate Charge(Qg)16.8nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)11.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation29.9W
RDS(on)120mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)27pF
Number1 N-channel
Input Capacitance(Ciss)500pF
TypeN-Channel

Technical details

N-Channel 100V 11.3A 29.9W Surface Mount TO-252

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