DOINGTER DH100PG-C

DOINGTER · FETs & Power MOSFETs · MPN DH100PG-C

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Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)119pF
Current - Continuous Drain(Id)20A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation66W
Reverse Transfer Capacitance (Crss@Vds)92pF
RDS(on)80mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.077nF
TypeP-Channel

Technical details

100V 20A 1.6V 66W 80mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS

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