DOINGTER DE003TDG

DOINGTER · FETs & Power MOSFETs · MPN DE003TDG

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.15nF
Current - Continuous Drain(Id)160A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation156W
RDS(on)2.5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)14.7pF
Number1 N-channel
Input Capacitance(Ciss)4.4nF
TypeN-Channel

Technical details

60V 160A 1.8V 156W 2.5Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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