DOINGTER DD2R5TDG

DOINGTER · FETs & Power MOSFETs · MPN DD2R5TDG

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.52nF
Current - Continuous Drain(Id)150A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)78.7pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

40V 150A 2.5V 96W 2mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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