DOINGTER DD016NG

DOINGTER · FETs & Power MOSFETs · MPN DD016NG

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)109pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation45W
RDS(on)10mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)96pF
Number1 N-channel
Input Capacitance(Ciss)1.25nF
TypeN-Channel

Technical details

40V 30A 1.3V 45W 10mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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