DOINGTER DD008NG-S

DOINGTER · FETs & Power MOSFETs · MPN DD008NG-S

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)182pF
Current - Continuous Drain(Id)60A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation54.3W
RDS(on)6.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)144pF
Number1 N-channel
Input Capacitance(Ciss)2.45nF
TypeN-Channel

Technical details

40V 60A 2.5V 54.3W 6.5mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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