DOINGTER DD006NG-A

DOINGTER · FETs & Power MOSFETs · MPN DD006NG-A

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Specifications

Gate Charge(Qg)72nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)266pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation142W
RDS(on)4.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)223pF
Number1 N-channel
Input Capacitance(Ciss)3.777nF
TypeN-Channel

Technical details

40V 100A 1.9V 142W 4.2mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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