DOINGTER DC4R5NG-E

DOINGTER · FETs & Power MOSFETs · MPN DC4R5NG-E

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)42nC@10V
Output Capacitance(Coss)206pF
Current - Continuous Drain(Id)90A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.55V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)186pF
RDS(on)3.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.098nF
TypeN-Channel

Technical details

30V 90A 1.55V 62.5W 3.6mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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