DOINGTER DC003NG-E

DOINGTER · FETs & Power MOSFETs · MPN DC003NG-E

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)499pF
Current - Continuous Drain(Id)150A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation108W
Reverse Transfer Capacitance (Crss@Vds)430pF
RDS(on)2.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)3.5nF
TypeN-Channel

Technical details

30V 150A 1.5V 108W 2.3Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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