DOINGTER · FETs & Power MOSFETs · MPN DB5R5N2G
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 25nC@4.5V |
| Output Capacitance(Coss) | 267pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 224pF |
| RDS(on) | 4.2Ω@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.862nF |
| Type | N-Channel |
20V 60A 700mV 33W 4.2Ω@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS