DOINGTER DB010PG-S

DOINGTER · FETs & Power MOSFETs · MPN DB010PG-S

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)22nC@10V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)336pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation31.25W
Reverse Transfer Capacitance (Crss@Vds)304pF
RDS(on)7mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.59nF
TypeP-Channel

Technical details

20V 50A 700mV 31.25W 7mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS

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