DOINGTER DB010NG

DOINGTER · FETs & Power MOSFETs · MPN DB010NG

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Specifications

Gate Charge(Qg)15nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)178pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.2nF
TypeN-Channel

Technical details

20V 30A 750mV 38W 8mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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