DOINGTER DB006PG-B

DOINGTER · FETs & Power MOSFETs · MPN DB006PG-B

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)530pF
Current - Continuous Drain(Id)60A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))850mV
Pd - Power Dissipation70W
RDS(on)5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)462pF
Number1 P-Channel
Input Capacitance(Ciss)4.589nF
TypeP-Channel

Technical details

20V 60A 850mV 70W 5mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS

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