DOINGTER DB006NG-B

DOINGTER · FETs & Power MOSFETs · MPN DB006NG-B

No reviews yet — be the first to review DOINGTER DB006NG-B.

Specifications

Gate Charge(Qg)22nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)6.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.831nF
TypeN-Channel

Technical details

N-Channel 20V 60A 37W Surface Mount TO-252

Related FETs & Power MOSFETs