DOINGTER DB003PG-S

DOINGTER · FETs & Power MOSFETs · MPN DB003PG-S

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)99nC@10V
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)1.599nF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation38W
RDS(on)2.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.067nF
Number1 P-Channel
Input Capacitance(Ciss)14.999nF
TypeP-Channel

Technical details

20V 120A 1V 38W 2.9mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS

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