DOINGTER DB003NG

DOINGTER · FETs & Power MOSFETs · MPN DB003NG

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)64nC@10V
Output Capacitance(Coss)856pF
Current - Continuous Drain(Id)150A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation89W
RDS(on)1.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)759pF
Number1 N-channel
Input Capacitance(Ciss)6.2nF
TypeN-Channel

Technical details

20V 150A 900mV 89W 1.7mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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