DOINGTER · FETs & Power MOSFETs · MPN BJ50NG
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| Gate Charge(Qg) | 58.5nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 585pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 13.5pF |
| RDS(on) | 50Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.34nF |
| Type | N-Channel |
200V 50A 4V@250uA 104W 50Ω@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS