DOINGTER ATP113-TL-H-DO

DOINGTER · FETs & Power MOSFETs · MPN ATP113-TL-H-DO

No reviews yet — be the first to review DOINGTER ATP113-TL-H-DO.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)114nC@10V
Output Capacitance(Coss)258pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation270W
Reverse Transfer Capacitance (Crss@Vds)211pF
RDS(on)17mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.399nF
TypeP-Channel

Technical details

P-Channel 60V 50A 270W Surface Mount TO-252

Related FETs & Power MOSFETs