DOINGTER ATP106-DO

DOINGTER · FETs & Power MOSFETs · MPN ATP106-DO

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)35A
Output Capacitance(Coss)260pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)12mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.05nF
TypeP-Channel

Technical details

P-Channel 40V 35A Surface Mount TO-252

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