DIODES ZXTP717MATA

DIODES · Transistors (BJTs) · MPN ZXTP717MATA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO7V
DC Current Gain180
Pd - Power Dissipation12W
Number1 PNP
typePNP
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))140mV

Technical details

Bipolar (BJT) Transistor PNP 12V 4A 100MHz 12W Surface Mount DFN-3(2x2)

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