DIODES ZXTP2041F

DIODES · Transistors (BJTs) · MPN ZXTP2041F

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain800
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation350mW
typePNP
Number1 PNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 40V 1A 300MHz 350mW Surface Mount SOT-23

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