DIODES ZXTP2012ZTA

DIODES · Transistors (BJTs) · MPN ZXTP2012ZTA

No reviews yet — be the first to review DIODES ZXTP2012ZTA.

Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain45
Pd - Power Dissipation1.5W
Number1 PNP
typePNP
Current - Collector(Ic)4.3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))65mV

Technical details

Bipolar (BJT) Transistor PNP 60V 4.3A 120MHz 1.5W Surface Mount SOT-89

Related Transistors (BJTs)