DIODES ZXTP2012ASTZ

DIODES · Transistors (BJTs) · MPN ZXTP2012ASTZ

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)3.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))14mV

Technical details

Bipolar (BJT) Transistor PNP 60V 3.5A 120MHz 1W Through Hole TO-92

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