DIODES ZXTN617MATA

DIODES · Transistors (BJTs) · MPN ZXTN617MATA

No reviews yet — be the first to review DIODES ZXTN617MATA.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO15V
Emitter-Base Voltage VEBO7V
DC Current Gain200
Pd - Power Dissipation12W
Number1 NPN
typeNPN
Current - Collector(Ic)4.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))310mV

Technical details

Bipolar (BJT) Transistor NPN 15V 4.5A 80MHz 12W Surface Mount DFN-3(2x2)

Related Transistors (BJTs)