DIODES ZXTN5551FLTA

DIODES · Transistors (BJTs) · MPN ZXTN5551FLTA

No reviews yet — be the first to review DIODES ZXTN5551FLTA.

Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)130MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain80
Pd - Power Dissipation330mW
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))65mV

Technical details

160V 80 NPN 600mA SOT-23-3 Single Bipolar Transistors RoHS

Related Transistors (BJTs)