DIODES ZXTN25100DGTA

DIODES · Transistors (BJTs) · MPN ZXTN25100DGTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)175MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain120
Pd - Power Dissipation12.8W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))100mV

Technical details

Bipolar (BJT) Transistor NPN 100V 3A 175MHz 12.8W Surface Mount SOT-223

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