DIODES ZXTN19100CZTA

DIODES · Transistors (BJTs) · MPN ZXTN19100CZTA

No reviews yet — be the first to review DIODES ZXTN19100CZTA.

Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain200
Pd - Power Dissipation2.4W
Number1 NPN
typeNPN
Current - Collector(Ic)5.25A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))65mV

Technical details

Bipolar (BJT) Transistor NPN 100V 5.25A 150MHz 2.4W Surface Mount SOT-89

Related Transistors (BJTs)