DIODES ZXTN19055DZTA

DIODES · Transistors (BJTs) · MPN ZXTN19055DZTA

No reviews yet — be the first to review DIODES ZXTN19055DZTA.

Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO55V
Emitter-Base Voltage VEBO7V
DC Current Gain250
Pd - Power Dissipation2.1W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))60mV

Technical details

Bipolar (BJT) Transistor NPN 55V 6A 200MHz 2.1W Surface Mount SOT-89

Related Transistors (BJTs)