DIODES ZXTN10150DZTA

DIODES · Transistors (BJTs) · MPN ZXTN10150DZTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)135MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation1.5W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor NPN 150V 1A 135MHz 1.5W Surface Mount SOT-89-3L

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