DIODES ZXTC6719MCTA

DIODES · Transistors (BJTs) · MPN ZXTC6719MCTA

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Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation1.7W
Collector - Emitter Voltage VCEO50V;40V
DC Current Gain100
Emitter-Base Voltage VEBO7V
Transition frequency(fT)165MHz;190MHz
typeNPN+PNP
Vce Saturation(VCE(sat))370mV
Number1 NPN + 1 PNP
Current - Collector(Ic)4A;3A
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 50V;;;40V 4A;;;3A 165MHz;;;190MHz 1.7W Surface Mount DFN-8(3x2)

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