DIODES ZXTC6717MCQTA

DIODES · Transistors (BJTs) · MPN ZXTC6717MCQTA

No reviews yet — be the first to review DIODES ZXTC6717MCQTA.

Specifications

Current - Collector Cutoff100nA
DC Current Gain300
Pd - Power Dissipation1.13W
Collector - Emitter Voltage VCEO15V;12V
Transition frequency(fT)120MHz;110MHz
Vce Saturation(VCE(sat))310mV
typeNPN+PNP
Current - Collector(Ic)4.5A;4A
Operating Temperature-55℃~+150℃

Technical details

300 1.13W NPN+PNP W-DFN3020-8 Bipolar Transistor Arrays RoHS

Related Transistors (BJTs)