DIODES · Transistors (BJTs) · MPN ZXT12N50DXTA
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 300 |
| Collector - Emitter Voltage VCEO | 50V |
| Pd - Power Dissipation | 1.25W |
| Emitter-Base Voltage VEBO | 7.5V |
| Transition frequency(fT) | 132MHz |
| Vce Saturation(VCE(sat)) | 175mV |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 3A |
| Operating Temperature | -55℃~+150℃ |
300 50V 1.25W NPN 3A MSOP-8 Bipolar Transistor Arrays RoHS