DIODES ZXT12N20DXTA

DIODES · Transistors (BJTs) · MPN ZXT12N20DXTA

No reviews yet — be the first to review DIODES ZXT12N20DXTA.

Specifications

Current - Collector Cutoff100nA
DC Current Gain300
Pd - Power Dissipation1.04W
Collector - Emitter Voltage VCEO20V
Transition frequency(fT)112MHz
Vce Saturation(VCE(sat))160mV
typeNPN
Current - Collector(Ic)3.5A
Operating Temperature-55℃~+150℃

Technical details

300 1.04W 20V NPN 3.5A MSOP-8 Bipolar Transistor Arrays RoHS

Related Transistors (BJTs)