DIODES ZXMP6A18DN8TA

DIODES · FETs & Power MOSFETs · MPN ZXMP6A18DN8TA

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Specifications

Current - Continuous Drain(Id)4.8A
RDS(on)55mΩ@10V
Pd - Power Dissipation1.25W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage60V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)140pF
Number2 P-Channel
Input Capacitance(Ciss)1.58nF
Gate Charge(Qg)23nC
Operating Temperature-55℃~+150℃

Technical details

P-Channel 60V 4.8A 1.25W Surface Mount SO-8

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